What is the name of the complete electronic component

Many companies' procurement will find that when they get the components in the BOM provided by engineers to purchase materials, suppliers often ask more carefully, otherwise they do not know which materials to supply you, and in serious cases, the materials purchased can not be used. Why is this the case? The problem is that many inexperienced engineers do not write down the device model. The following is an example of what a complete device model looks like.

A complete device model usually consists of the main model, prefix, suffix, etc. The average engineer only cares about the prefix and the main model, and ignores the suffix, or even a few engineers ignore the prefix. Of course, not all devices must have prefixes and suffixes, but as long as the device has prefixes and suffixes, it cannot be ignored.

What is the name of the complete electronic component

Device prefix is generally on behalf of the larger device series, such as logic IC 74LS series on behalf of low power Schottky logic IC, 74ASL series on behalf of advanced low power Schottky logic IC, 74ASL series better performance than 74LS series. For example, the package of 2N5551 triode and MMBT5551 triode is different, one is plug-in (TO-92), the other is patch (SOT-23). If the BOM only says 5551 triode, I don't know which one it is.

Prefixes are less common, but suffixes are more common. In general, suffixes have the following uses:

1, distinguish the details of performance

For example, take MAXIM's reset chip, the MAX706, which is also 706 but has several threshold voltages, such as 2.93V for the MAX706S and 3.08V for the MAX706T, where the suffixes "S" and "T" represent different threshold voltages.

2. Distinguish device grade and operating temperature

For example, TL431, the reference voltage chip of TI company, TL431C represents the operating temperature of the device is 0 degrees to 70 degrees (civil grade), TL431I represents the operating temperature of the device is -40 degrees to 85 degrees (industrial grade), where the suffix "C" and "I" represent different operating temperatures.

3, distinguish device packaging form

For example, TL431, the benchmark voltage chip of TI company, TL431CP represents PDIP package, TL431CD represents SOIC package, in which the suffixes "P" and "D" represent different packages (" C "stands for temperature, as explained above).

4. Distinguish the ordering and packaging methods

What is the name of the complete electronic component

For example, TL431CD, the benchmark voltage chip of TI Company, must be ordered by TL431CDR model if it is required to purchase by plate (2500PCS/ plate). The suffix "R" here stands for plate. Otherwise, if you place an order according to TL431CD, you may get 75PCS/ tubes.

5. Distinguish between leaded and lead-free

For example, ON company's comparator chip LM393D (" D "means SOIC package), if you want to use lead-free model, you must order according to LM393DG, the suffix" G "here means lead-free model, without this suffix is leaded model.

The suffix may have other special uses, in short, the suffix of information can not be omitted, otherwise buy back may not be the material you want.

The prefixes and suffixes of different companies may be different (there are also a few companies with the same prefix suffix), which needs to refer to the specific situation of the actual manufacturer.

Nomenclature of semiconductor components in various countries

I. Naming methods of semiconductor devices in China

The model of semiconductor device consists of five parts (field effect device, semiconductor special device, compound tube, PIN type tube, and the model name of laser device is only the third, fourth and fifth parts). The meanings of the five parts are as follows:

Part ONE: Digital representation of the number of effective electrodes for semiconductor devices. 2-diode, 3-triode

Part II: Materials and polarities of semiconductor devices are represented by Chinese phonetic alphabet.

When representing the diode: A-N type germanium material, B-P type germanium material, C-N type silicon material, D-P type silicon material.

When denoting triode: A-PNP type germanium material, B-NPN type germanium material, C-PNP type silicon material, D-NPN type silicon material.

Part three: The inner type of semiconductor devices represented by Chinese phonetic alphabet.

P-ordinary tube, V-microwave tube, W-regulator tube, C-parameter tube, Z-rectifier tube, L-rectifier reactor, S-tunnel tube,

N-damping tube, U-photoelectric device, K-switching tube, X-low frequency small power tube (F <3MHz,Pc<1W),

G-high frequency small power tube (F >3MHz,Pc<1W), D-low frequency high power tube (F <3MHz,Pc>1W),

A-hf high power tube (F >3MHz,Pc>1W), T-semiconductor thyristor (controllable rectifier),

Y-body effect device, B-avalanche tube, J-step recovery tube, CS field effect tube,

BT- semiconductor special devices, FH- composite pipe, PIN-PIN type pipe, JG- laser device.

Part FOUR: Using numbers to show serial numbers

Part V: Use Chinese pinyin letters to represent the specification number. For example, 3DG18 represents NPN type silicon high frequency triode.

Japanese semiconductor discrete device model naming method

Semiconductor discrete devices manufactured in Japan, consisting of five to seven parts.

Usually only the first five parts are used, and the symbolic meanings of each part are as follows:

Part ONE: numerically represent the number or type of effective electrodes of the device.

0-photoelectric (photosensitive) diode triode and the combination of the device,

1-diode,

2 Tripoles or other devices with two PN junctions,

3- Other devices with four active electrodes or three PN junctions,

Be pushy and so on.

Part II: JEIA registration logo of Japan Electronics Industry Association.

S- represents a semiconductor discrete device registered with JEIA.

Part III: Use letters to indicate the polarity and type of materials used in the device.

A-pnp high frequency tube,

B-pnp type low frequency tube,

C-npn type high frequency tube,

D-npn type low frequency tube,

F-p controlled thyristor,

G-n controlled thyristor,

H-n base single junction transistor,

J-p channel feTS, such as 2SJ -- -

K-n channel feTS, such as 2SK -- -

M- bidirectional thyristor.

Part IV: indicate the serial number registered with JEIA by number.

Integers with more than two digits - starting with "11", indicating the serial number registered with JEIA;

Devices with the same performance from different companies can use the same serial number; The higher the number, the more recent the product.

Part V: Use letters to indicate the same model of improved product logo.

A, B, C, D, E, and F indicate that the device is an improvement of the original model.

Iii. Designation method for discrete semiconductor devices in the United States

The nomenclature of transistors or other semiconductor devices is confusing in the United States.

Electronic Industry Association of America discrete semiconductor devices named as follows:

Part ONE: Type of device use indicated by symbols.

JAN - heads,

JANTX- Special grade,

JANTXV- Ultra Special Grade,

JANS- Aerospace class,

Non - Military supplies.

Part TWO: Number of PN junctions. 1-diode, 2= triode, 3-three PN junction devices, N-N PN junction devices.

Part III: EIA registration logo.

N- The device is registered with EIA.

Part IV: ELECTRONIC Industry Association of America registration serial number.

Multiple digit - the serial number of the device registered with the Electronics Industry Association of America.

Part v: Use letters to indicate device divisions. A, B, C, D, pusuant - Different grades of the same model. Such as:

JAN2N3251A stands for PNP silicon high frequency low power switching triode

JAN - heads,

What is the name of the complete electronic component

2-triode,

N-eia registration mark,

3251-EIA Registration Serial number,

A - 2 n3251a file.

Designation of semiconductor devices by the International Federation of Electronics

Germany, France, Italy, the Netherlands, Belgium and other European countries as well as Hungary, Romania, Yugoslavia, Poland and other eastern European countries, most of the international Electronics Federation semiconductor discrete device model naming method.

This naming method consists of four basic parts, the symbols and meanings of each part are as follows:

Part ONE: letters denoting the material used in the device.

A- The band gap of the materials used in the device Eg=0.6~1.0eV, such as germanium,

B- Devices using materials Eg=1.0~1.3eV, such as silicon,

C- devices using materials Eg>1.3eV, such as gallium arsenide,

D- device used materials Eg<0.6eV, such as indium antimonide,

E- devices use composite materials and materials used in photocells.

The second part: use letters to indicate the types and main features of devices.

A-detector switch mixing diode,

B- varactor diode,

C-low frequency low power triode,

D-low-frequency high-power triode,

E-tunnel diode,

F-high frequency low power triode,

G-composite devices and other devices,

H- magnetic diode,

Hall element in K- open magnetic circuit,

L-hf high power triode,

Hall element in M- closed magnetic circuit,

P-photosensitive device,

Q-light-emitting devices,

R-low power thyristor,

S-low power switching tube,

T-high power thyristor,

U-high power switch tube,

X-multiplication diode,

Y-rectifier diode,

Z-stabilized diode.

Part III: Use numbers or alphanumeric numbers to indicate the registration number.

Three digit - represents the registration number of general semiconductor devices, one letter plus two digit - represents the registration number of special semiconductor devices.

Part FOUR: use letters to classify devices of the same type.

A, B, C, D, E, comma indicates that devices of the same model are graded according to A specified parameter.

In addition to the four basic parts, suffixes are sometimes added to distinguish characteristics or to further classify. Common suffixes are as follows:

1, regulator diode model suffix. The first part of the suffix is A letter, which represents the allowable error range of the stable voltage value. The letters A, B, C, D, and E respectively represent the allowable error of ±1%, ±2%, ±5%, ±10%, ±15%; The second part of the suffix is a number, representing the integer value of the nominal stable voltage; The third part of the suffix is the letter V, in place of the decimal point, the number after the letter V is the small value of the nominal stable voltage of the regulator tube.

2, the rectifier diode suffix is a number, indicating the maximum reverse peak voltage value of the device, the unit is volts.

3. Thyristor models are also numeric suffixes,

The lower value of the maximum reverse peak voltage withstand and maximum reverse turn-off voltage are usually marked. For example: BDX51- represents NPN silicon low-frequency high-power triode, AF239S- represents PNP germanium high-frequency low-power triode.

European early discrete semiconductor device model nomenclature

Some Countries in Europe, such as Germany, the Netherlands use the following naming method:

Part I: O- stands for semiconductor device.

The second part: A-diode, C-triode, AP-photodiode, CP- phototriode, AZ-regulator tube, RP-photoelectric device.

Part III: multi-digit number - indicates the registration number of the device.

Part IV: A, B, C,, and represent variations of devices of the same model.

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